FDC655BN Overview
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDC655BN Key Features
- 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V
- Fast switching
- Low gate charge
- High performance trench technology for extremely low Rdson
