FDC655BN - Single N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC655BN
Manufacturer	ON Semiconductor
File Size	364.29 KB
Description	Single N-Channel MOSFET
Datasheet	FDC655BN Datasheet
Additional preview pages of the FDC655BN datasheet.

Product details

Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance. line power loss and fast switching are required.

Features

Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A.
Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A.
Fast Switching.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

📁 Similar Datasheet

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Other Datasheets by ON Semiconductor

FDC6506P - Dual P-Channel MOSFET
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FDC6561AN - Dual N-Channel MOSFET
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Published: Mar 27, 2021 |