FDC655BN Overview
This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDC655BN Key Features
- Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A
- Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A
- Fast Switching
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Continuous TA = 25°C (Note 1a)
- Pulsed
- 55 to +150 °C
- Rev. 4
