FDC655BN Overview
Description
This N-Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A
- Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A
- Fast Switching
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- Continuous TA = 25°C (Note 1a) 6.3 A
- Pulsed 20 PD Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range
