FDC654P - P-Channel MOSFET

onsemi

General Description

This P

advanced POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

3.6 A,.
30 V. RDS(ON) = 75 mW @ VGS =.
10 V RDS(ON) = 125 mW @ VGS =.
4.5 V.
Low Gate Charge (6.2 nC typical).
High Performance Trench Technology for Extremely Low RDS(ON).
These Device is Pb.
Free and Halogen Free.

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FDC654P p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDC654P
Manufacturer	onsemi
File Size	338.15 KB
Description	P-Channel MOSFET
Datasheet	FDC654P Datasheet

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FDC6506P	Dual P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Single, P-Channel, Logic Level, POWERTRENCH) FDC654P General Description This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process. It has been optimized for battery power management applications. Features • −3.6 A, −30 V. RDS(ON) = 75 mW @ VGS = −10 V RDS(ON) = 125 mW @ VGS = −4.5 V • Low Gate Charge (6.2 nC typical) • High Performance Trench Technology for Extremely Low RDS(ON) • These Device is Pb−Free and Halogen Free Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS Drain−Source Voltage Gate−Source Voltage −30 V ±20 V ID Drain Current − Continuous − Pulsed (Note 1a) −3.