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FDC655BN Datasheet Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET April 2005 FDC655BN Single N-Channel, Logic Level, PowerTrench®.

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

D D S 55 TM B G D 1 2 3 6 5 4 SuperSOT-6 D Absolute Maximum Ratings TA = 25°C unless otherwise noted http://..net/ Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current Parameter Ratings 30 ±20 (Note 1a) 6.3 20 (Note 1a) (Note 1b) 1.6 0.8 – 55 to +150 Units V V A – Continuous – Pulsed Maximum Power Dissipation W °C °C/W °C/W Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 Package Marking and Ordering Information Device Marking .55B Device FDC655BN Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2005 Fairchild Semiconductor Corporation 1 .fairchildsemi.

Key Features

  • 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V.
  • Fast switching.
  • Low gate charge.
  • High performance trench technology for extremely low Rdson General.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDC655BN Single N-Channel MOSFET ON Semiconductor

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