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FDC6506P Datasheet Dual P-channel Logic Level Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™.

General Description

These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

  • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V.
  • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDC6506P Dual P-Channel MOSFET ON Semiconductor

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