FDC6506P Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages...
FDC6506P Key Features
- 1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V