Datasheet4U Logo Datasheet4U.com

FDC6506P - Dual P-Channel Logic Level PowerTrench MOSFET

General Description

These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V.
  • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC6506P Dual P-Channel MOSFET ON Semiconductor
FDC653N N-Channel MOSFET ON Semiconductor
FDC654P P-Channel MOSFET ON Semiconductor
FDC655BN Single N-Channel MOSFET ON Semiconductor
FDC6561AN Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDC653N N-Channel MOSFET
FDC654P P-Channel MOSFET
FDC655AN Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET
FDC655BN PowerTrench MOSFET
FDC6561AN Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V • • • • Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).