FDC6506P
Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
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Low gate charge (2.3n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications
- Load switch
- Battery protection
- Power management
D2 S1 D1
G2
Super SOT
-6
S2 G1
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage...
