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FDC653N Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: November 1997 FDC653N N-Channel Enhancement Mode Field Effect.

General Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 3 .65 G pin 1 2 5 D D SuperSOT TM 3 -6 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID PD Drain-Source Vol.

Similar Datasheet

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FDC653N Distributor