Datasheet4U Logo Datasheet4U.com

FDC653N - N-Channel MOSFET

General Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

Key Features

  • 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 3 .65 G pin 1 2 5 D D SuperSOT TM 3 -6 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID PD Drain-Source Vol.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC653N N-Channel MOSFET ON Semiconductor
FDC6506P Dual P-Channel MOSFET ON Semiconductor
FDC654P P-Channel MOSFET ON Semiconductor
FDC655BN Single N-Channel MOSFET ON Semiconductor
FDC6561AN Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET
FDC654P P-Channel MOSFET
FDC655AN Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET
FDC655BN PowerTrench MOSFET
FDC6561AN Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.