FDC653N Datasheet (Fairchild Semiconductor)

Part FDC653N
Description N-Channel MOSFET
Category MOSFET
Manufacturer Fairchild Semiconductor
Size 70.75 KB
Pricing from 0.24816 USD, available from Avnet and Newark.
Fairchild Semiconductor

FDC653N Overview

Key Specifications

Package: SOT-23-6
Mount Type: Surface Mount
Pins: 6
Height: 1.1 mm

Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance.

Key Features

  • RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability

Price & Availability

Seller Inventory Price Breaks Buy
Avnet 234000 3000+ : 0.24816 USD
6000+ : 0.24605 USD
12000+ : 0.24182 USD
24000+ : 0.2376 USD
View Offer
Newark 6002 5+ : 0.979 USD
10+ : 0.668 USD
25+ : 0.611 USD
50+ : 0.553 USD
View Offer