FDC653N Datasheet
FDC653N Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-.
5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
FDC653N Datasheet (onsemi)
onsemi
This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−stat.
* 5.0 A, 30 V
RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
* Proprietary SUPERSOTTM
*6 Package Design Using Copper Lead
Frame for Superior Thermal and Electrical Capabilities.
* High Density Cell Design for Extremely Low RDS(ON).
* Exceptional On
*Resistance and Maximum DC Current Ca.