FDC653N - N-Channel MOSFET

onsemi

General Description

This N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Key Features

5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V.
Proprietary.

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FDC653N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDC653N
Manufacturer	onsemi
File Size	311.99 KB
Description	N-Channel MOSFET
Datasheet	FDC653N Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel Enhancement Mode Field Effect Transistor FDC653N General Description This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package. Features • 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V • Proprietary SUPERSOTTM−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.