FDC653N Description
This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in−line power loss are...
FDC653N Key Features
- 5.0 A, 30 V
- Proprietary SUPERSOTTM-6 Package Design Using Copper Lead
- High Density Cell Design for Extremely Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current Capability
- This Device is Pb-Free and Halogen Free