Description
This P
Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 4 A,.
- 30 V.
- RDS(ON) = 0.050 W @ VGS =.
- 10 V.
- RDS(ON) = 0.075 W @ VGS =.
- 4.5 V.
- Low Gate Charge (8 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint (72% Smaller than
Standard SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.
FDC658P Datasheet
