FDC658AP Overview
Description
This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.
Key Features
- Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
- Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
- Low Gate Charge
- High performance trench technology for extremely low rDS(on)
- RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3
