| Part Number | FDC658AP Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET FDC658AP (KDC658AP)
■ Features
● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 75mΩ (VGS =-4.5V) ● Low Gate Charge
( SOT-23-6 ) 0.4+0.1
-0..
* VDS (V) =-30V * ID =-4 A (VGS =-10V) * RDS(ON) ＜ 50mΩ (VGS =-10V) * RDS(ON) ＜ 75mΩ (VGS =-4.5V) * Low Gate Charge ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 1 6 2 5 3 4 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 . |
FDC658AP Datasheet and Specifications PDF
The FDC658AP is a P-Channel MOSFET.
| Part Number | FDC658AP Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | onsemi |
| Overview | . . |
| Part Number | FDC658AP Datasheet |
|---|---|
| Description | Single P-Channel Logic Level MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.
Applications
Battery management
Load .
* Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A * Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A * Low Gate Charge * High performance trench technology for extremely low rDS(on) * RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbo. |