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FDC658AP - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4 A (VGS =-10V).
  • RDS(ON) ＜ 50mΩ (VGS =-10V).
  • RDS(ON) ＜ 75mΩ (VGS =-4.5V).
  • Low Gate Charge ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 1 6 2 5 3 4 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1.Drain 4.Source 2.Drain 5.Drain 3.Gate 6.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.

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SMD Type P-Channel MOSFET FDC658AP (KDC658AP) ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 75mΩ (VGS =-4.5V) ● Low Gate Charge ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 1 6 2 5 3 4 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1.Drain 4.Source 2.Drain 5.Drain 3.Gate 6.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.