Kexin Electronics FDC658AP
P-Channel MOSFET
| Part No. | FDC658AP |
|---|---|
| Datasheet | FDC658AP Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-30V● ID =-4 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V)
● RDS(ON) ＜ 75mΩ (VGS =-4.5V)
● Low Gate Charge ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 1 6 2 5 3 4 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1.Drain 4.Source 2.Drain 5.Drain 3.Gate 6.Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1: 78℃/W when mounted on a 1 in 2 pad of 2 oz copper Note.2: 156℃/W whe mounted on a minimum pad of 2 oz copper Rating -30 ±25 -4 -20 1.6 0.8 78 30 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET FDC658AP (KDC658AP)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Paramet...
