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FDC658P - Single P-Channel MOSFET

General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 8 .65 G D 2 5 SuperSOT TM -6 pin 1 D 3 4 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).