| Part Number | FDC658P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for sup.
* *4 A, *30 V * RDS(ON) = 0.050 W @ VGS = *10 V * RDS(ON) = 0.075 W @ VGS = *4.5 V * Low Gate Charge (8 nC Typical) * High Performance Trench Technology for Extremely Low RDS(ON) * SUPERSOTt *6 Package: Small Footprint (72% Smaller than Standard SO *8); Low Profile (1 mm Thick) * This is a Pb *Free Dev. |
FDC658P Datasheet and Specifications PDF
The FDC658P is a P-Channel MOSFET.
| Part Number | FDC658P Datasheet |
|---|---|
| Description | Single P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ga. -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOT. |