FDC658P Description
This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDC658P Key Features
- 4 A, -30 V
- RDS(ON) = 0.050 W @ VGS = -10 V
- RDS(ON) = 0.075 W @ VGS = -4.5 V
- Low Gate Charge (8 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device