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FDC654P Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General.

General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • -3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 4 .65 G pin 1 2 5 D D SuperSOT TM -6 3 4 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDC654P P-Channel MOSFET ON Semiconductor

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FDC654P Distributor