FDC654P
FDC654P is P-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
-3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. Super SOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SOT-23
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
4 .65
G pin 1
Super SOT
-6
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
- Continuous Drain Current
- Continuous
- Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)
FDC654P -30 ±20 -3.6 -10 1.6 0.8 -55 to 150
Units V V A
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDC654P Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 o C VDS = -24 V, VGS = 0 V TJ = 55 C IGSSF IGSSR VGS(th) Gate
- Body Leakage, Forward...
