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FDC655AN - Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .55 pin 1 A G D D 2 5 3 4 SuperSOT TM -6 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage -.

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📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .