FDC655AN - Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC655AN
Manufacturer	Fairchild Semiconductor
File Size	198.01 KB
Description	Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET
Datasheet	FDC655AN Datasheet
Additional preview pages of the FDC655AN datasheet.

Product details

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .55 pin 1 A G D D 2 5 3 4 SuperSOT TM -6 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage -.

📁 Similar Datasheet

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Other Datasheets by Fairchild Semiconductor

FDC655BN - PowerTrench MOSFET
FDC6506P - Dual P-Channel Logic Level PowerTrench MOSFET
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FDC654P - P-Channel MOSFET
FDC6561AN - Dual N-Channel MOSFET
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Published: Mar 30, 2005 |