FDC655AN Overview
Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V
- Low gate charge ( typical 9 nC)
- SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6
