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FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Load Switch Synchronous Rectifier

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A.
  • Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • Fast switching speed.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A „ Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.