FDC8601 N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDC8601
Manufacturer: Fairchild Semiconductor
File Size: 194.94 KB
Datasheet: FDC8601-FairchildSemiconductor.pdf
Description: N-Channel Shielded Gate PowerTrench MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surf

Applications

* Load Switch
* Synchronous Rectifier
* Primary Switch S D D D G D Pin 1 D D 6 1 D SuperSOTTM -6 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -

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FDC8601 N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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