FDC8601 - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDC8601
Manufacturer	ON Semiconductor
File Size	385.00 KB
Description	N-Channel MOSFET
Datasheet	FDC8601 Datasheet
Additional preview pages of the FDC8601 datasheet.

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A.
Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET (Fairchild Semiconductor)
FDC8601 - N-Channel 100V MOSFET (VBsemi)
FDC8602 - Dual N-Channel Shielded Gate PowerTrench MOSFET (Fairchild Semiconductor)
FDC86244 - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
FDC855N - Single N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDC8878 - N-Channel MOSFET (Fairchild Semiconductor)
FDC8884 - N-Channel MOSFET (Fairchild Semiconductor)
FDC8886 - N-Channel MOSFET (Fairchild Semiconductor)
FDC-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter (Premo)
FDC05 - 5 WATTS OUTPUT POWER (Snaptec)

Other Datasheets by ON Semiconductor

Published: Dec 21, 2023 |