FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDC8601
Manufacturer	Fairchild Semiconductor
File Size	194.94 KB
Description	N-Channel Shielded Gate PowerTrench MOSFET
Datasheet	FDC8601 Datasheet
Additional preview pages of the FDC8601 datasheet.

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Load Switch Synchronous Rectifier

Shielded Gate MOSFET Technology.
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A.
Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

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Published: Aug 3, 2014 |