FDC8601 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
FDC8601 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
- Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant