FDC8602 Overview
Key Specifications
Package: SOT-23-6
Mount Type: Surface Mount
Pins: 6
Height: 1.1 mm
Description
This N-Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.
Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A
- Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
