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FDC8602 - Dual N-Channel MOSFET

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A.
  • Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDC8602
Manufacturer onsemi
File Size 358.91 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC8602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 1.2 A, 350 mW FDC8602 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A • Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.