FDC8602 - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDC8602
Manufacturer	ON Semiconductor
File Size	358.91 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC8602 Datasheet
Additional preview pages of the FDC8602 datasheet.

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A.
Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 21, 2023 |