FDC8602 Datasheet | Fairchild Semiconductor

FDC8602 Dual N-Channel Shielded Gate Power Trench® MOSFET May 2013 Dual N-Channel Shielded Gate Power Trench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s Power Trench® process - Shielded Gate MOSFET Technology - Max r DS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A - Max r DS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL Tested - Ro HS pliant incorporates Shielded Gate technology. This process has been optimized for r DS(on), switching performance and ruggedness. Applications - Load Switch - Synchronous Rectifier D2 S1 D1 G2 S2 Pin 1 Super SOT G1 -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 1.2 5 1.5 0.96 0.69 -55 to +150 Units V V A A m J W °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 60 130 °C/W Package Marking and Ordering Information Device Marking .862 Device FDC8602 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units .fairchildsemi. ©2011 Fairchild Semiconductor Corporation FDC8602...