The FDC8602 is a Dual N-Channel Shielded Gate PowerTrench MOSFET.
| Package | SOT-23-6 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1.1 mm |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDC8602 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) =.
General Description
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
* Shielded Gate MOSFET Technology * Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A * Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A * High performance trench technology for extrem. |
| Part Number | FDC8602 Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedn.
* Shielded Gate MOSFET Technology * Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A * Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * Fast Switching Speed. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 479 | 5+ : 2.16 USD 10+ : 1.38 USD 25+ : 1.24 USD 50+ : 1.08 USD |
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| Newark | 0 | 3000+ : 0.743 USD 6000+ : 0.675 USD 12000+ : 0.608 USD 18000+ : 0.585 USD |
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| Verical | 6000 | 3000+ : 0.5636 USD | View Offer |