FDC8602 Description
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested...
FDC8602 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
- Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant