Datasheet4U Logo Datasheet4U.com

FDD050N03B Datasheet N-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

📥 Download Datasheet

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) 30 ±16 90* 63* 50 360 72 2 65 0.43 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature.

Package limitation current is 50A.

Overview

FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.

Key Features

  • RDS(on) = 3.7 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 33 nC( Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDD044AN03L N-Channel PowerTrench MOSFET
FDD068AN03L N-Channel MOSFET
FDD107AN06LA0 N-Channel PowerTrench MOSFET
FDD10AN06A0 N-Channel MOSFET
FDD10AN06A0_F085 MOSFET
FDD10N20LZ MOSFET
FDD120AN15A0 N-Channel PowerTrench MOSFET
FDD13AN06A0 N-Channel PowerTrench MOSFET
FDD14AN06LA0 N-Channel PowerTrench MOSFET
FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET