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Fairchild Semiconductor Electronic Components Datasheet

FDD050N03B Datasheet

N-Channel PowerTrench MOSFET

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March 2013
FDD050N03B
N-Channel PowerTrench® MOSFET
30 V, 90 A, 5.0 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• Fast Switching Speed
• Low Gate Charge, QG = 33 nC( Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
D
D
G
S
D-PAK
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
FDD050N03B
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
30
±16
90*
63*
50
360
72
2
65
0.43
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
FDD050N03B
2.3
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD050N03B Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD050N03B
Device
FDD050N03B
Package
D-PAK
Reel Size
330mm
Tape Width
16mm
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
ID = 250μA, Referenced to 25oC
VDS = 24V, VGS = 0V
VGS = ±16V, VDS = 0V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 15A
VDS = 5V, ID = 50A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V
f = 1MHz
VDD = 15V, ID = 50A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 15V, ID = 50A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 50A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 50A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C
3. ISD 50A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. When mounted on a 1 in2 pad of 2 oz copper
Min.
30
-
-
-
1.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
13
-
-
2.0
3.7
5.2
169
2160
805
85
33
7.8
3.8
4.6
14.5
4.5
30
4.5
-
-
-
33
19
Quantity
2500
Max. Unit
-
-
1
±100
V
mV/oC
μA
nA
3.0 V
5.0
8.1
mΩ
-S
2875
1070
130
43
-
-
-
pF
pF
pF
nC
nC
nC
nC
39 ns
18 ns
70 ns
19 ns
90* A
360 A
1.3 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2
www.fairchildsemi.com


Part Number FDD050N03B
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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