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Fairchild Semiconductor Electronic Components Datasheet

FDD10N20LZ Datasheet

MOSFET

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FDD10N20LZ
N-Channel UniFETTM MOSFET
200 V, 7.6 A, 360 mΩ
Features
• RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD10N20LZTM
200
±20
7.6
4.5
30
121
7.6
8.3
4.5
83
0.7
-55 to +150
300
FDD10N20LZTM
1.5
110
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD10N20LZ Datasheet

MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FDD10N20LZTM
Top Mark
FDD10N20LZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
200
-
-
0.2
-V
- V/oC
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
-
-
-
-
1
10
μA
- - ±10 μA
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.8 A
VGS = 5 V, ID = 3.8 A
VDS = 20 V, ID = 3.8 A
2.0 - 3.0 V
- 0.30 0.36
- 0.32 0.38 Ω
- 8 -S
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 100 V, ID = 7.6 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
440 585 pF
75 100 pF
11 17 pF
12 16 nC
2 - nC
3.5 - nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 100 V, ID = 7.6 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
-
-
-
10 30 ns
15 40 ns
55 120 ns
25 60 ns
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 7.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 7.6 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 4.2 mH, IAS = 7.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 7.6 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
- - 7.6 A
- - 30 A
- - 1.4 V
- 115 - ns
- 0.5 - μC
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. C1
2
www.fairchildsemi.com


Part Number FDD10N20LZ
Description MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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