FDD10N20LZTM Description
FDD10N20LZTM-VB FDD10N20LZTM-VB Datasheet N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252.
FDD10N20LZTM Key Features
- Trench Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC