General Description
* Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
* Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A
* High performance trench technology for ex.

Application
* Inverter
* Power Supplies S G S D www.DataSheet4U.com G D -PA K TO -2 52 (TO -252) D MOSF.

* Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
* Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A
* High performance trench technology for extremely low rDS(on)
* RoHS Compliant November 2006 This P-Channel MOSFET has been produced usi.

FDD4243-F085

FDD4243-G

FDD4243_F085

FDD4141

FDD4141-F085

FDD45AN06LA0

FDD4685

FDD4685-F085

FDD4685_F085

FDD4N60NZ

FDD01

FDD03-xxx

FDD03U