FDD4685 Datasheet | Fairchild Semiconductor

FDD4685 40V P-Channel PowerTrench® MOSFET March 2015 FDD4685 40V P-Channel PowerTrench® MOSFET - 40V, - 32A, 27mΩ Features General Description - Max rDS(on) = 27mΩ at VGS = - 10V, ID = - 8.4A - Max rDS(on) = 35mΩ at VGS = - 4.5V, ID = - 7A - High performance trench technology for extremely low rDS(on) - RoHS pliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. Application - Inverter - Power Supplies DT O- P-2A5K2 (T O -25 2) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS EAS PD...