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FDD4685 - P-Channel MOSFET

Description

Max rDS(on) = 27mΩ at VGS = 10V, ID = 8.4A Max rDS(on) = 35mΩ at VGS = 4.5V, ID = 7A High performance trench technology for extremely low rDS(on) RoHS Compliant This P-Channel MOSFET has been produced using Fairchild Semic

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD4685 40V P-Channel PowerTrench® MOSFET March 2015 FDD4685 40V P-Channel PowerTrench® MOSFET –40V, –32A, 27mΩ Features General Description „ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A „ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
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