FDD4685-F085 Datasheet | onsemi

FDD4685-F085 P-Channel PowerTrench® MOSFET P-Channel PowerTrench® MOSFET -40 V, -32 A, 35 mΩ Features - Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A - Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A - Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A - UIS Capability - RoHS pliant - Qualified to AEC Q101 Applications - Inverter - Power Supplies S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (TC < 90°C, VGS=10) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate Above 25oC TJ, TSTG RJC...