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FDD4141 - P-Channel MOSFET

General Description

This P Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in conver

Key Features

  • Max RDS(on) = 12.3 mW at VGS =.
  • 10 V, ID =.
  • 12.7 A.
  • Max RDS(on) = 18.0 mW at VGS =.
  • 4.5 V, ID =.
  • 10.4 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDD4141
Manufacturer onsemi
File Size 406.47 KB
Description P-Channel MOSFET
Datasheet download datasheet FDD4141 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -40 V, -50 A, 12.3 mW FDD4141 General Description This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features  Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A  Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.