FDD4141-F085
Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
Key Features
- Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
- Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
- High performance trench technology for extremely low rDS(on)
- Qualified to AEC Q101
- RoHS Compliant
