FDD4141-F085 Datasheet | Fairchild Semiconductor

FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features - Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A - Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A - High performance trench technology for extremely low rDS(on) - Qualified to AEC Q101 - RoHS pliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Appli...