Datasheet Details
| Part number | FDD5353 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 344.92 KB |
| Description | MOSFET |
| Datasheet | FDD5353-FairchildSemiconductor.pdf |
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Overview: FDD5353 N-Channel Power Trench® MOSFET April 2015 FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.
| Part number | FDD5353 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 344.92 KB |
| Description | MOSFET |
| Datasheet | FDD5353-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
RoHS Compliant Application Inverter Synchronous rectifier Primary switch G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Char
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDD5353 | 60V 50A N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDD5202P | P-Channel MOSFET |
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| FDD5614P | 60V P-Channel PowerTrench MOSFET |
| FDD5670 | 60V N-Channel MOSFET |
| FDD5680 | N-Channel/ PowerTrench MOSFET |
| FDD5690 | 60V N-Channel PowerTrench MOSFET |
| FDD5810 | N-Channel Logic Level Trench MOSFET |
| FDD5810_F085 | N-Channel Logic Level Trench MOSFET |
| FDD5N50 | N-Channel UniFET MOSFET |
| FDD5N50F | N-Channel MOSFET |