Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
60 V, 50 A, 12.3 mW
General Description This N-Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A
- Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant
Applications
- Inverter
- Synchronous Rectifier
- Primary Switch
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
Drain to Source Voltage
VGS Gate to Source...
