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FDD5353 - 60V 50A N-Channel MOSFET

General Description

POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features

  • Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A.
  • Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A.
  • 100% UIL Tested.
  • This Device is Pb-Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDD5353
Manufacturer onsemi
File Size 275.52 KB
Description 60V 50A N-Channel MOSFET
Datasheet download datasheet FDD5353 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 12.3 mW FDD5353 General Description This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A • Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A • 100% UIL Tested • This Device is Pb-Free, Halide Free and RoHS Compliant Applications • Inverter • Synchronous Rectifier • Primary Switch MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current A −Continuous TC = 25°C 50 −Continuous TA = 25°C (Note 1a) 11.