Datasheet Summary
FDD5353 N-Channel Power Trench® MOSFET
April 2015
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
General Description
- Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
- Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
- 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- RoHS pliant
Application
- Inverter
- Synchronous rectifier
- Primary switch
DT O-P-2A5K2 (T O -25 2)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
EAS PD TJ,...
