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FDD5353 - MOSFET

General Description

Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and y

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5353 N-Channel Power Trench® MOSFET April 2015 FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3m Features General Description  Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A  Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A  100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.