FDD5N60NZ Key Features
- RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A
- Low Gate Charge (Typ. 10 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Imoroved Capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDD5N50 | N-Channel UniFET MOSFET |
| FDD5N50F | N-Channel MOSFET |
| FDD5N50FTM_WS | N-Channel MOSFET |
| FDD5N50NZ | MOSFET |
| FDD5N50NZF | MOSFET |