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FDD5N60NZ - MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.

In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.

Overview

FDD5N60NZ — N-Channel UniFETTM II MOSFET FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.

Key Features

  • RDS(on) = 1.65 Ω (Typ. ) @ VGS = 10 V, ID = 2.0 A.
  • Low Gate Charge (Typ. 10 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Imoroved Capability.
  • RoHS Compliant.