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Fairchild Semiconductor Electronic Components Datasheet

FDD6637_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDD6637_F085
P-Channel PowerTrench® MOSFET
-35V, -21A, 18mΩ
Features
„ Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
„ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
„ Typ Qg(10) = 45nC at VGS = -10V
„ High performance trench technology for extremely low
rDS(on).
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Inverter
„ Power Supplies
„
„
December 2010
©2010 Fairchild Semiconductor Corporation
FDD6637_F085 Rev. C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD6637_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Drain to Source Avalanche Voltage (maximum)
VGS Gate to Source Voltage
ID
Drain Current Continuous (TC < 155oC, VGS = 10V)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Dreate above 25oC
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
-35
-45
±25
-21
See Figure 4
61
68
0.46
-55 to + 175
Units
V
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.2
40
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD6637
FDD6637_F085
Package
TO-252
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = -28V, VGS = 0V
VGS = ±25V
-35
-
-
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250μA
ID = -14A, VGS= -10V
ID = -11A, VGS= -4.5V
ID = -14A, VGS= -10V, TC = 150oC
VDS = -5V, ID = -14A
-1
-
-
-
-
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to -10V
VGS = 0 to -5V
VDD = -20V
ID = -14A
-
-
-
-
-
-
-
-
Typ
-
-
-
-1.6
9.7
14.4
15.3
35
2370
470
250
3.6
45
25
7
10
Max Units
-
-1
±100
V
μA
nA
-3 V
11.6
18 mΩ
18
-S
- pF
- pF
- pF
-Ω
63 nC
35 nC
- nC
- nC
FDD6637_F085 Rev. C
2
www.fairchildsemi.com


Part Number FDD6637_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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