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FDD6637_F085 - P-Channel PowerTrench MOSFET

Datasheet Summary

Features

  • Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A.
  • Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A.
  • Typ Qg(10) = 45nC at VGS = -10V.
  • High performance trench technology for extremely low rDS(on).
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Datasheet Details

Part number FDD6637_F085
Manufacturer Fairchild Semiconductor
File Size 287.48 KB
Description P-Channel PowerTrench MOSFET
Datasheet download datasheet FDD6637_F085 Datasheet
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Full PDF Text Transcription

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FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A „ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A „ Typ Qg(10) = 45nC at VGS = -10V „ High performance trench technology for extremely low rDS(on). „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Inverter „ Power Supplies „ „ December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www.fairchildsemi.
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