FDD6637_F085
Key Features
- Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
- Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
- Typ Qg(10) = 45nC at VGS = -10V
- High performance trench technology for extremely low rDS(on)
- Qualified to AEC Q101
- Part: FDD6637_F085
- Description: P-Channel PowerTrench MOSFET
- Category: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 287.48 KB