FDD6780 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description June 2009
* Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A
* Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A
* 100% UIL test
* R.

Application

* Vcore DC-DC for Desktop Computers and Servers
* VRM for Intermediate Bus Architecture D G S D DTO-P-2A5K2 .

Description

June 2009
* Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A
* Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A
* 100% UIL test
* RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency.

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