FDD6780A Datasheet | Fairchild Semiconductor

FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET March 2015 25 V, 8.6 mΩ Features General Description - Max r DS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A - Max r DS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A - 100% UIL test - Ro HS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture S D-PAK (TO-252) Short-Lead I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25...