FDD6780 Description
June 2009 Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDD6780 Key Features
- Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A
- Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A
- 100% UIL test
- RoHS pliant