FDD6780 Datasheet | Fairchild Semiconductor

FDD6780 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description June 2009 - Max r DS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A - Max r DS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A - 100% UIL test - Ro HS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics...