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FDD6782A - N-Channel MOSFET

General Description

Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronou

Key Features

  • General.

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FDD6782A N-Channel Power Trench® MOSFET FDD6782A N-Channel PowerTrench® MOSFET January 2009 25 V, 10.5 mΩ Features General Description „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.