FDD6770A Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A 100% UIL tested RoHS pliant Applications Vcore DC-DC for...
FDD6770A Key Features
- Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A
- 100% UIL tested
- RoHS pliant