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FDD6770A - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Max rDS(on) = 4.0 mΩ at VGS = 10

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6770A N-Channel PowerTrench® MOSFET January 2009 FDD6770A N-Channel PowerTrench® MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A „ 100% UIL tested „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G S D-PAK TO -252 (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.