FDD6776A Datasheet | Fairchild Semiconductor

FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET 25 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. - Max r DS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A - Max r DS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A - 100% UIL test - Ro HS pliant Applications - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted .. Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 30 54 17.7 100 32 39 3.7 -55 to +175 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.8 40 °C/W Package Marking and Ordering Information Device Marking FDD6776A FDU6776A Device FDD6776A FDU6776A_F071 Package D-PAK (TO-252) TO-251AA Reel Size 13 ’’ N/A(Tube) Tape Width 12 mm N/A Quantity 2500 units 75 units ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C .fairchildsemi. FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature...