FDD6778A Datasheet | Fairchild Semiconductor

FDD6778A N-Channel Power Trench® MOSFET January 2009 N-Channel Power Trench® MOSFET 25 V, 14.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. - Max r DS(on) = 14.0 mΩ at VGS = 10 V, ID = 10.0 A - Max r DS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 9.7 A - 100% UIL tested - Ro HS pliant Applications - Vcore DC-DC for Desktop puters and Servers - VRM for Intermediate Bus Architecture D-PAK TO -252 (TO-252) MOSFET Maximum Ratings TC = 25 °C unless otherwise noted .. Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 10 30 12 50 12 24 3.7 -55 to +175 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.2 40 °C/W Package Marking and Ordering Information Device Marking FDD6778A Device FDD6778A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDD6778A Rev.C .fairchildsemi. FDD6778A N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V...