FDD6N50TM_F085 Datasheet | Fairchild Semiconductor

FDD6N50TM_F085 500V N-Channel MOSFET 500V N-Channel MOSFET Features - 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V - Low gate charge ( typical 12.8 n C) - Low Crss ( typical 9 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Qualified to AEC Q101 - Ro HS pliant November 2010 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. G S...