FDD7N20
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
- Low gate charge( Typ. 5nC )
- Low Crss ( Typ. 5pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant April 2007 UniFETTM tm
