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FDD7N20 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A.
  • Low gate charge( Typ. 5nC ).
  • Low Crss ( Typ. 5pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant April 2007 UniFETTM tm.

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Datasheet preview – FDD7N20

Datasheet Details

Part number FDD7N20
Manufacturer Fairchild Semiconductor
File Size 292.22 KB
Description MOSFET
Datasheet download datasheet FDD7N20 Datasheet
Additional preview pages of the FDD7N20 datasheet.

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Full PDF Text Transcription

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FDD7N20 / FDU7N20 200V N-Channel MOSFET FDD7N20 / FDU7N20 N-Channel MOSFET 200V, 5A, 0.69Ω Features • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A • Low gate charge( Typ. 5nC ) • Low Crss ( Typ. 5pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant April 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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