Datasheet Details
| Part number | FDD8453LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 444.27 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDD8453LZ Download (PDF) |
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| Part number | FDD8453LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 444.27 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDD8453LZ Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
Applications Inverter Synchronous Rectifier D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 40 ±20 50 75 16.4 100 253 65 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.9 40 °C/W Device Marking FDD8453LZ Device FDD8453LZ Package D-PAK (TO-252) Reel Size 13’’ Tape Width 16mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.
FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.
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