FDD8453LZ_F085 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications Inverter Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev.
FDD8453LZ_F085 Key Features
- Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
- Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
- HBM ESD protection level > 7kv typical
- RoHS pliant
- Qualified to AEC Q101