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FDD8453LZ_F085 - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

to enhance ESD voltage level.

Inverter Synchronous Rect

Key Features

  • Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A.
  • Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A.
  • HBM ESD protection level > 7kv typical.
  • RoHS Compliant.
  • Qualified to AEC Q101 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8453LZ_F085 N-Channel Power Trench® MOSFET FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Aug 2012 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level > 7kv typical „ RoHS Compliant „ Qualified to AEC Q101 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev. C1 Symbol D G S 1 www.fairchildsemi.