Datasheet Details
| Part number | FDD86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 486.00 KB |
| Description | N-Channel MOSFET |
| Download | FDD86102LZ Download (PDF) |
|
|
| Part number | FDD86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 486.00 KB |
| Description | N-Channel MOSFET |
| Download | FDD86102LZ Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDD86102LZ | N-Channel MOSFET | INCHANGE |
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