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FDD86102LZ Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
  • HBM ESD protection level > 6 kV typical (Note 4)
  • Very low Qg and Qgd pared to peting trench
  • Fast switching speed
  • 100% UIL tested
  • RoHS pliant

Other FDD86102LZ Datasheets

Manufacturer Part Number Description
INCHANGE Logo Inchange Semiconductor FDD86102LZ N-Channel MOSFET

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FDD86102LZ Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd pared to peting trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded...