The FDD86102LZ is a N-Channel MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDD86102LZ Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
FDD86102LZ
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliab.
*Static drain-source on-resistance: RDS(on)≤22.5mΩ *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *DC-DC Conversion *Inverters *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS . |
| Part Number | FDD86102LZ Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Q.
General Description
* Shielded Gate MOSFET Technology * Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A * Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A * HBM ESD protection level > 6 kV typical (Note 4) * Very low Qg and Qgd compared to competing trench technologies * Fast switching speed * 100% UIL . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 820 | 1+ : 2.41 USD 10+ : 1.63 USD 25+ : 1.48 USD 50+ : 1.33 USD |
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| Newark | 0 | 2500+ : 1.05 USD 3000+ : 1.02 USD 6000+ : 0.949 USD 12000+ : 0.879 USD |
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| Verical | 3850 | 100+ : 0.9216 USD 250+ : 0.7596 USD 500+ : 0.7345 USD 1000+ : 0.6997 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| FDD86102 | Fairchild Semiconductor | N-Channel MOSFET |